| PART |
Description |
Maker |
| KTD921 |
Darlington Transistor
TRIPLE DIFFUSED NPN TRANSISTOR (COLOR & B/W TV POWER SUPPLY, INDUSTRIAL USE POWER SUPPLY, GENERAL PURPOSE POWER AMPLIFIER DARLINGRON TRANSISTOR)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 2SA1932 |
POWER AMPLIFIER APPLICATIONS DRIBVER STAGE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SA1241 E000486 |
TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) 晶体管（功率放大器，开关应用）
TRANSISTOR (POWER AMPLIFIER/ SWITCHING APPLICATIONS)
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| MPS3391 MPS929 MPS930A MPS3390 MPS3396 MPS3397 MPS |
NPN silicon amplifier transistor. 45 V.
(MPS929 / MPS930A) AMPLIFIER TRANSISTOR
AMPLIFIER TRANSISTOR 放大器晶体管
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| 2SD2449 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications
|
TOSHIBA
|
| KTA1666 |
EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING) 外延平面PNP晶体管（功率放大器，功率开关）
EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER/ POWER SWITCHING)
|
KEC Holdings
KEC(Korea Electronics)
|
| 2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC2982 E000777 |
TRANSISTOR (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) 晶体管（STOROBO闪光，中等功率放大器应用
TRANSISTOR (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| KSA614YTSTU KSA614 KSA614Y KSA614YTU KSA614O KSA61 |
Low Frequency Power Amplifier
PNP Epitaxial Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Bulk 3 A, 55 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| 2SB1015 2SB1015A EA09109 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
